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Condensed Matter > Materials Science

arXiv:1507.06016 (cond-mat)
[Submitted on 22 Jul 2015]

Title:Three-Dimensional Interface Roughness in Layered Semiconductor Structures and Its Effects on Intersubband Transitions

Authors:Alex Y. Song, Rajaram Bhat, Pierre Bouzi, Chung-En Zah, Claire F. Gmachl
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Abstract:A general model for treating the effects of three dimensional interface roughness (IFR) in layered semiconductor structures has been derived and experimentally verified. Configurational averaging of the IFR potential produces an effective grading potential in the out-of-plane direction, greatly altering the energy spectrum of the structures. IFR scattering self-energy is also derived for the general case; when IFR is strong, its scattering effect is shown to dominate over phonon interaction and impurity scattering. When applied to intersubband transitions, the theoretical predictions explain the experimental observation of the anomalous energy shift and unusual broadening of the ISB transitions in III-Nitride thin-layered superlattices.
Comments: 5 pages, 5 figures
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1507.06016 [cond-mat.mtrl-sci]
  (or arXiv:1507.06016v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1507.06016
Journal reference: Phys. Rev. B 94, 165307 (2016)
Related DOI: https://doi.org/10.1103/PhysRevB.94.165307

Submission history

From: Alex Y. Song [view email]
[v1] Wed, 22 Jul 2015 00:07:22 UTC (1,947 KB)
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